Cascode semiconductor device structure and method therefor

ABSTRACT

In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. Provisional PatentApplication No. 62/069,761 filed on Oct. 28, 2014, which is herebyincorporated by reference in its entirety.

BACKGROUND

The present invention relates, in general, to electronics and, moreparticularly, to semiconductor device structures and methods of formingsemiconductor devices.

Power semiconductor devices, such as rectifiers, thyristors, bipolartransistors, metal oxide semiconductor field effect transistors(MOSFETs) are used in a wide variety of power conversion system. Suchdevices can be configured to control the flow of current through ON/OFFswitching operations. The efficiency of a power conversion system maydepend on the efficiency of the power semiconductor devices used in thepower conversion systems.

Many power semiconductor devices used in power conversion systems arebased on silicon. However, due to certain physical limitations ofsilicon and associated manufacturing processes used to makesilicon-based devices have made it difficult to further increase theefficiency of silicon-based power semiconductor devices for certainapplications. For example, some silicon-based devices use thick regionsof lightly doped or intrinsically doped material that support highbreakdown voltages, but result in high voltage drops in forwardconduction mode. In high current applications, this is one source ofpower losses. Also, higher voltage silicon-based devices tend to havelonger reverse recovery times, which further impact the efficiency ofthese devices. Additionally, discrete power semiconductor devices areoften co-packaged with other electronic devices, which have madeassembly and packing processes more complex, and this approach hasgenerated parasitics into the power conversion system. Such parasiticshave impaired system performance.

Accordingly, improved power semiconductor structures and methods ofintegrating and/or making such structures are needed that address theissues described above including power loss reduction as well as others.It would be beneficial for such structures and methods to be costeffective and compatible for manufacturing integration, and to notdetrimentally affect device performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a circuit schematic of a cascode rectifier structureincluding a rectifier device in accordance with an embodiment of thepresent invention;

FIG. 2 illustrates a partial top plan view of a cascode rectifierstructure in accordance with an embodiment of the present invention;

FIG. 3 illustrates a partial cross-sectional view of the cascoderectifier structure device structure of FIG. 2 taken along referenceline 3-3;

FIG. 4 illustrates a partial cross-sectional view of an alternativeembodiment of a bond-over-active source electrode configuration inaccordance with an embodiment of the present invention;

FIG. 5 illustrates a partial cross-sectional view of the cascoderectifier structure device structure of FIG. 2 taken along referenceline 5-5;

FIG. 6 illustrates a partial top plan view of a cascode rectifierstructure in accordance with a further embodiment of the presentinvention;

FIG. 7 illustrates a partial cross-sectional view of the cascoderectifier structure device structure of FIG. 6 taken along referenceline 7-7;

FIG. 8 illustrates a partial cross-sectional view of a cascode rectifierstructure in accordance with another embodiment of the presentinvention;

FIG. 9 illustrates a partial cross-sectional view of another portion ofthe cascode rectifier structure of FIG. 8;

FIG. 10 illustrates a partial cross-sectional view of the cascoderectifier structure device structure of FIG. 2 taken along referenceline 3-3 in accordance with a further embodiment of the presentinvention; and

FIG. 11 illustrates a partial cross-sectional view of the cascoderectifier structure device structure of FIG. 2 taken along referenceline 3-3 in accordance with a still further embodiment of the presentinvention.

For simplicity and clarity of the illustration, elements in the figuresare not necessarily drawn to scale, and the same reference numbers indifferent figures denote the same elements. Additionally, descriptionsand details of well-known steps and elements are omitted for simplicityof the description. As used herein, current-carrying electrode means anelement of a device that carries current through the device, such as asource or a drain of an MOS transistor, an emitter or a collector of abipolar transistor, or a cathode or anode of a diode, and a controlelectrode means an element of the device that controls current throughthe device, such as a gate of a MOS transistor or a base of a bipolartransistor. Although the devices are explained herein as certain N typeregions and certain P type regions, a person of ordinary skill in theart understands that the conductivity types can be reversed and are alsopossible in accordance with the present description. Also, the devicesexplained herein can be Ga-face GaN devices or N-face GaN devices. Oneof ordinary skill in the art understands that the conductivity typerefers to the mechanism through which conduction occurs such as throughconduction of holes or electrons, therefore, and that conductivity typedoes not refer to the doping concentration but the doping type, such asP type or N type. It will be appreciated by those skilled in the artthat the words during, while, and when as used herein relating tocircuit operation are not exact terms that mean an action takes placeinstantly upon an initiating action but that there may be some small butreasonable delay(s), such as various propagation delays, between thereaction that is initiated by the initial action. Additionally, the termwhile means that a certain action occurs at least within some portion ofa duration of the initiating action. The use of the word approximatelyor substantially means that a value of an element has a parameter thatis expected to be close to a stated value or position. However, as iswell known in the art there are always minor variances that prevent thevalues or positions from being exactly as stated. It is well establishedin the art that variances of up to at least ten per cent (10%) (and upto twenty per cent (20%) for semiconductor doping concentrations) arereasonable variances from the ideal goal of exactly as described. Theterms first, second, third and the like in the claims or/and in theDetailed Description of the Drawings, as used in a portion of a name ofan element are used for distinguishing between similar elements and notnecessarily for describing a sequence, either temporally, spatially, inranking or in any other manner. It is to be understood that the terms soused are interchangeable under appropriate circumstances and that theembodiments described herein are capable of operation in other sequencesthan described or illustrated herein. For clarity of the drawings, dopedregions of device structures are illustrated as having generallystraight line edges and precise angular corners. However, those skilledin the art understand that due to the diffusion and activation ofdopants the edges of doped regions generally may not be straight linesand the corners may not be precise angles. Additionally, it is to beunderstood that where it is stated herein that one layer or region isformed on or disposed on a second layer or another region, the firstlayer may be formed or disposed directly on the second layer or theremay be intervening layers between the first layer and the second layer.Further, as used herein, the term formed on is used with the samemeaning as located on or disposed on and is not meant to be limitingregarding any particular fabrication process. Moreover, the term “majorsurface” when used in conjunction with a semiconductor region, wafer, orsubstrate means the surface of the semiconductor region, wafer, orsubstrate that forms an interface with another material, such as adielectric, an insulator, a conductor, or a polycrystallinesemiconductor. The major surface can have a topography that changes inthe x, y and z directions.

DETAILED DESCRIPTION OF THE DRAWINGS

In the present description, a “group III-V” semiconductor device ordevice structure or similar terms pertains to a compound semiconductorstructure including one or more group III elements and one or more groupV elements. Examples include, but are not limited to indium aluminumgallium nitride (InAlGaN), indium gallium nitride (InGaN), galliumnitride (GaN), and similar compounds as known to those of ordinary skillin the art. Additionally, “III-nitride semiconductor” pertains to acompound semiconductor structure including one or more group IIIelements. Examples include, but are not limited to InAlGaN, InGaN, GaN,AlGaN, MN, InN, and similar compounds as known to those of ordinaryskill the art.

The present description is directed to a group III-V semiconductordevice structure integrated with a semiconductor-containing rectifierdevice (for example, a silicon-containing rectifier device) placed inseries with the group III-V semiconductor device to form a cascoderectifier structure. In one embodiment, the rectifier device isconfigured to provide a vertical (i.e., perpendicular to the maincurrent path of the group III-V semiconductor device) conduction pathfrom the source electrode (cathode of the rectifier) to the substrate(anode of the system) of the group III-V semiconductor device. Inaccordance with the present embodiments, the breakdown voltage of thesilicon diode can be low, as long as it is higher than the absolutevalue of the threshold voltage of the III-V semiconductor device. Thisensures that in reverse blocking condition, the III-V material is turnedoff and blocks most of the reverse voltage. Also, the lower breakdownvoltage enables the structure to have, for example, improved forwardconduction and reverse recovery times compared to silicon-based powersemiconductor devices

In one embodiment, the group III-V semiconductor device is a normally-ontransistor device having the control electrode electrically connected toa current carrying electrode, such as the source electrode. Inaccordance with the present embodiment, the substrate of the group III-Vsemiconductor device is connected to the anode electrode of the cascoderectifier structure. In other embodiments, the silicon-containingrectifier device and the group III-V semiconductor device are integratedtogether within a common semiconductor substrate. In one preferredembodiment, the silicon-containing rectifier device is configured toprovide a current path that is generally perpendicular to the primarycurrent path of the group III-V semiconductor device.

FIG. 1 illustrates a circuit diagram of a cascode rectifier structure 10in accordance with one embodiment including a normally-on group III-Vsemiconductor device 11 and a normally-off rectifier device 30, such asa rectifier device. Having these two components connected together canincrease complexity with device packaging techniques (e.g., addedpin-outs and increased die pad size), and can have parasitic electricalissues with some connection techniques, which can degrade deviceperformance. The present embodiments are concerned with addressing theseissues as well as others.

In one embodiment, group III-V semiconductor device 11 is configured asa normally-on transistor and includes a first current carrying electrodeor source electrode 13, a second current carrying electrode or drainelectrode 12, and a control electrode or gate electrode 14. Cascoderectifier structure 10 further includes a rectifier device 30 withavalanche capability connected between source electrode 13 and a node15. In accordance with the present embodiment, gate electrode 14 and asubstrate 100 (further described in FIG. 3) in which cascode rectifierstructure 10 is formed are electrically connected to node 15. Drainelectrode 12 can be configured to be electrically connected to a node16, such as a V_(DD) node.

FIG. 2 illustrates a partial top plan view of a group III-Vsemiconductor structure 200 including an integrated rectifier device 230in a cascode rectifier configuration 110 in accordance with a firstembodiment. Structure 200 is an embodiment of group III-V semiconductordevice 10 illustrated in FIG. 1, and includes a semiconductor substrate28 having a major surface 128 over which various conductive electrodepatterns are provided. More particularly, in one embodiment structure200 includes first current carrying electrode or source electrode 13,control electrode or gate electrode 14, and second current carryingelectrode or drain electrode 12. Group III-V semiconductor structure 200is an example of a bond-over-active configuration, and it is understoodthat more than one layer of metallization can be used to interconnectthe various electrodes.

In the present embodiment, the electrodes can have generally stripe-likeshape and are generally parallel to each other with drain electrode 12laterally spaced apart from source electrode 13 and having gateelectrode 14 disposed laterally between drain electrode 12 and sourceelectrode 13. In accordance with the present embodiment, structure 200further includes an integrated rectifier device 230 disposedelectrically connected to source electrode 13 and extending intosemiconductor substrate 28. In accordance with the present embodiment,rectifier device 230 is electrically connected to node 15 as illustratedin FIG. 1. Additionally, in accordance with the present embodiment, gateelectrode 14 is electrically connected to a region of semiconductorsubstrate 28 by a conductive trench electrode 215 disposed below aportion 240 of gate electrode 14.

Drain electrode 12, source electrode 13, and gate electrode 14 can beconductive materials suitable for use in group III-V semiconductordevices. In some embodiments, aluminum alloy materials with seed andanti-reflective coating layers can be used. In some embodiments,titanium-nitride/aluminum-copper/titanium-nitride materials can be usedand can be formed using, for example, evaporation, sputtering, and/orplating techniques. The layers can be patterned using photo-lithographicand etch techniques. In some embodiments, multiple layers of conductivematerials can be used to interconnect the electrodes to exposed padstructures and insulated from each other with inter-level dielectriclayers. It is also understood that some or all of the electrodesillustrated can have field shaping structures incorporated with them,including field shaping structures/field plates placed at differentlevels within a multi-level metallization scheme.

FIG. 3 illustrates a partial cross-sectional view of group III-Vsemiconductor structure 200 integrated with rectifier device 230 in acascode rectifier structure 110 in accordance with an embodiment takenalong reference line 3-3 of FIG. 2. In one preferred embodiment, groupIII-V semiconductor structure 200 is configured as a normally-on device.In the present embodiment, group III-V semiconductor structure 200includes semiconductor substrate 28, which can include a base substrate100, base semiconductor substrate 100, a region of semiconductormaterial 100, semiconductor region 100, or semiconductor substrate 100.In several embodiments, substrate 100 is a silicon substrate having a(111) orientation. In other embodiments, substrate 100 can have otherorientations. In other embodiments, substrate 100 can be silicon-carbideor other semiconductor materials. In one embodiment, substrate 100includes a semiconductor region 112 and a doped region 111 that adjoinsa major surface 190 of substrate 100. Semiconductor region 112 can be anintrinsically doped region or can be a lightly doped region, such as alightly doped p type region. Alternatively, semiconductor region 112 canbe heavily doped p type. Semiconductor region 112 can be formed usingepitaxial formation techniques or other techniques as known to those ofordinary skill in the art. In one embodiment, doped region 111 can bedoped p type and can have a graded dopant profile, such as a p+/p/p−profile where the p+ portion adjoins or is proximate to major surface190 of substrate 100 with the dopant concentration decreasing in adesired manner as doped region 111 extends inward from major surface 190of substrate 100. Doped region 111 can be formed using ion implantationand diffusion techniques, epitaxial formation techniques, or othertechniques as known to those of ordinary skill in the art. It isunderstood that when semiconductor region 112 comprises a heavily dopedregion, doped region 111 may be optional.

In one embodiment, structure 200 includes a buffer layer or nucleationlayer 116, a transition region 117, a channel layer 119, and a barrierlayer 121 formed on or adjoining substrate 100. In some embodiments,buffer layer 116 can be, for example, an MN layer situated oversubstrate 100. Transition region 117 can be one or more AlGaN layers,where each layer can have different concentrations of Al. For example,the aluminum concentration can be higher in layers of transition region117 closer to substrate 100 and the aluminum concentration can be lowerin layers of transition region 117 closer to channel layer 119. In otherembodiments, transition region 117 can comprise a super latticestructure disposed on buffer layer 116 and one or more back barrierlayers disposed on the super lattice structure. In one embodiment, theback barriers comprise AlGaN layers of different thickness, Alconcentration and carbon concentration. In some embodiments, the AlGaNback barrier next to the super lattice can have about 8% Al, a thicknessof about 0.2 um, a carbon concentration of about 1.0×10¹⁸ atoms/cm³. Insome embodiments, the second AlGaN back barrier layer is disposed overof the first AlGaN back barrier with about 8% Al, a thickness of about0.8 um, and a carbon concentration of about 3.0×10¹⁶ atoms/cm³ or less.In one embodiment, channel layer 119 comprising GaN is disposed over thesecond AlGaN back barrier layer and the GaN channel layer can have acarbon concentration of less than about 3.0×10¹⁶ atoms/cm³, and atypical thickness of from about 100 nm to about 200 nm.

Channel layer 119 can be formed situated over buffer layer 116 oroptional transition layers 117. In several embodiments, channel layer119 can be, for example, a GaN layer. In some embodiments, barrier layer121 can be AlGaN and can be formed over channel layer 119. Buffer layer116, transition layer(s) 117, channel layer 119, and barrier layer 121provide a heterostructure 113, and in one embodiment, can be formedusing metal organic chemical vapor deposition (“MOCVD”) techniques orother formation techniques as known to those of ordinary skill in theart. At the interface of the AlGaN layer 121 and the GaN channel 119 atwo-dimensional electron gas (2DEG) layer or channel region 122 iscreated, as known to those of ordinary skill in the art. In otherembodiments, wafer bonding techniques can be used to form the substrateconfiguration.

In some embodiments, group III-V semiconductor structure 200 can alsoinclude an insulation or insulative layer or layers 131 situatedoverlying portions of major surface 128 of structure 200, which can be,for example, silicon nitride, aluminum nitride, combinations thereof, orother insulative materials as known to those of ordinary skill in theart. In some embodiments, insulation layer 131 can be silicon nitrideformed using plasma-enhanced chemical vapor deposition techniques(“PECVD”), low pressure chemical vapor deposition (“LPCVD”), metalorganic chemical vapor deposition (“MOCVD”), or atomic layer deposition(“ALD”), and can have a thickness in some embodiments from about 0.1microns to about 1.0 microns. In some embodiments, the silicon nitrideforms part of a field plate that reduces the effect of the high electricfields that can be formed between the source and gate regions.

In some embodiments, group III-V semiconductor device 200 furtherincludes gate dielectric layer 126 situated over a portion of barrierlayer 121 as illustrated in FIG. 3. In other embodiments, any of thegroup III-V semiconductor devices described herein can be configuredwith a Schottky gate without gate dielectric layer 126. In someembodiments, gate dielectric region 126 can be silicon nitride, aluminumnitride, aluminum oxide, silicon dioxide or combinations thereof,hafnium oxide, or other materials as known to those of ordinary skill inthe art. Control or gate electrode 14 is situated over gate dielectricregion 126, and can be, for example, aluminum with a titanium and/ortitanium-nitride barrier or other conductive materials as known to thoseof ordinary skill in the art.

In accordance with the present embodiment, a trench 139 is formed toextend from major surface 128 generally downward and extending throughhetero structure 113, and into semiconductor region 112 of substrate100. In accordance with the present embodiment, trench 139 extends belowbuffer layer 116. Trench 139 can be formed using photolithographictechniques and wet or dry etching techniques. In some embodiments,trench 139 is lined or covered with an insulating material or layer 144.Insulating layer 144 can be, for example, silicon oxide, siliconnitride, aluminum oxide, aluminum nitride, or other materials as knownto those of ordinary skill in the art. Insulating layer 144 can beformed using PECVD techniques and/or atomic level deposition (ALD)techniques, and typically has a thickness sufficient to electricallyisolate conductive electrode 120 from heterostructure 113. Portions ofinsulating layer 144 are removed from a bottom or lower surface 1390 oftrench 139 to provide for electrical contact between conductiveelectrode 120 and semiconductor region 112. In some embodiments,insulating layer 144 is removed entirely from lower surface 1390 oftrench 139 to expose a portion of semiconductor region 112 adjoininglower surface 1390. By way of example, an anisotropic etch process canbe used to remove portions of insulating layer 144. In another example,a spacer process can be used to remove portions of insulating layer 144.

In accordance with the present embodiment, a doped region 114 can bedisposed adjoining lower surface 1390 of trench 139. In one embodiment,doped region 114 can be an n type region, and can be formed using, forexample, phosphorous or arsenic ion implantation and annealingtechniques or other doping techniques as known to those of ordinaryskill in the art. In an alternative embodiment, a series of ion implantscan be used to create a predetermined doping profile that provides, forexample, a desired breakdown characteristic for rectifier device 230. Insome embodiments, doped region 114 adjoins or abuts doped region 111 orextends into doped region 111. In accordance with the presentembodiment, trench 139 provides for a self-alignment feature for formingdoped region 114 after trench 139 is formed by introducing dopant intosubstrate 100 through trench 139.

In alternative embodiment, doped region 114 can be replaced with dopedregion 214 (shown as a dashed-outline, which is configured to extendalong a greater lateral portion of doped region 111 as illustrated inFIG. 3. In some embodiments, doped region 214 extends laterally acrossand below gate electrode 14 and drain electrode 12, and can be formedusing epitaxial growth techniques, buried layer formation techniques, orother techniques as known to those of ordinary skill in the art. In thisconfiguration, the diode area of rectifier device 230 is increased bycontinuous n type region 214, which in some embodiments is contacted inevery cell of structure 200 by trench 139. Among other things, thispreferably increases the current handling capability of rectifier device230. In one embodiment, the n+ region can be made continuous withcontacts made to it through the trench for every cell of the HEMTdevice. The substrate region above the n+/n/n− region can be made n− orp−. This region can be contacted also with the trench structure and willbe at source potential. (This is close to ground as it cannot floatabove BVdss of diode in any application). In one embodiment,semiconductor region 112 above n type region 214 can also be made ntype. In this configuration, semiconductor region 112 would be at thesame electrical potential as source electrode 13 of structure 200. Itwas observed that this potential would be low because it is only a fewvolts above doped region 111 or the anode of rectifier device 230thereby providing for a more stable electrical performance.

In a further embodiment, when semiconductor regions 112 is intrinsicallydoped or lightly p type doped, trench 139 can be etched deeper intosubstrate 100 to form a p-i-n diode on the surface of n type region 214facing buffer region 116. In one embodiment, another p+/p/p− type region211 (shown as a dashed line) is added adjacent the buffer region 116substrate 100 interface and is electrically connected to the anode ofrectifier device 230 using gate trench 215 (illustrated in FIG. 5). Inthis embodiment, the p-i-n diode is configured to have a higherbreakdown voltage than the source voltage of structure 200. Thisconfiguration ensures that substrate 100 is at the anode potentialthereby providing a more stable electrical performance. In anotherembodiment, region 211 can be brought into contact with region 214 toform a second diode structure. However, since the diode between region214 and region 111 in this embodiment is contacted all across substrate100, the region 214/region 111 diode provides the current path forconduction. In accordance with the present embodiment, the doped regionconfigurations described above provide a method for making rectifierdevice 230 with desired electrical characteristics in a moremanufacturable and repeatable way. In other embodiments, additionalcontacts can also be made to region 112 in the Z dimension to keep it atany desired potential. The dimensions of the epitaxial or various layersand their doping can be tuned in accordance with specific thermalbudgets used during the growth processes for heterostructure 113. Inmost embodiments, since rectifier device 230 connected to the source ofthe normally-on device is a low voltage device, terminations may not berequired. However, in other embodiment, any high voltage epitaxialstructure can be terminated at the ends of the device using a trench ora moat etched structure (or mesa etch) all the way into substrate 100.In the case of the moat etch, the moat etched structure can be cappedwith a dielectric to ensure the proper termination of the high voltagediode and make it more reliable.

Trench 139 can be filled (which includes, but is not limited tocompletely filled) or lined (which includes, but is not limited topartially filled) with a conductive material to provide conductiveelectrode 120. In one embodiment, the conductive material can be used tofurther provide source electrode 13 over a portion of major surface 128so that conductive electrode 120 and source electrode 13 are formed atthe same time. In an alternative embodiment, conductive electrode 120and source electrode 13 can be formed in two separate steps using thesame or different materials. The conductive material can then bepatterned using, for example, photolithographic and etch techniques toprovide source electrode 13, drain electrode 12, and gate electrode 14as generally illustrated in FIG. 3. In the present embodiment, trench139 is placed directly below source electrode 13, which in thisembodiment places trench 139 proximate to or adjacent to 2DEG region122. In one embodiment, source electrode 13 is offset in a direction1001 towards 2DEG region 122 to provide separation from trench 139 and2DEG region 122. In one embodiment, ion implantation techniques can beused to remove the 2DEG region 122 in a portion 1211 adjacent to whererectifier device 230 adjoins channel layer 119 and barrier layer 121. Inone embodiment, one or more nitrogen ion implant steps are used. In oneembodiment, multiple ion implant doses and implant energies can be used.In some embodiments, the ion implant doses can be in a range from about9.0×10¹² atoms/cm² to about 2.5×10¹³ atoms/cm², and implant energies canrange from about 30 keV to about 400 keV. In other embodiments, ashallow trench structure can be used to remove part of 2DEG region 122.

In the present embodiment, cascode rectifier 210 further includes aconductive electrode 136 disposed adjacent major surface 190 ofsubstrate 100. In some embodiments, conductive electrode 136 can be amulti-layer structure (i.e., more than one metal) oftitanium-nickel-silver, chrome-nickel-gold, or other conductivematerials as known to those of ordinary skill in the art. In accordancewith the present embodiments, conductive electrode 136 is configuredanode of rectifier device 230 and is configured preferably to beelectrically connected to node 15 in some applications as generallyillustrated in FIGS. 1 and 3.

In accordance with the present embodiment, the breakdown voltage ofrectifier device 230 is established or controlled by the doping profilesof doped region 114 (or 214) and/or doped region 111. Also, inaccordance with the present embodiment rectifier device 230 isintegrated within III-V semiconductor structure 200 to provide cascoderectifier structure 210. Another benefit of this configuration is thattrench 139 is etched through heterostructure 113 into semiconductorregion 112, which has been experimentally shown to reduce localizedstresses in III-V semiconductor device 200. This allows reducing thethickness of heterostructure 113 and thereby improving its thermalperformance of the group III-V semiconductor device 200. A furtheradvantage with this embodiment is that conductive electrode 120 withintrench 139 acts as a heat sinking device for source electrode 13. Also,this configuration of the present embodiment helps in tuning thebreakdown voltage of rectifier device 230 by changing the dopingprofiles of regions 114 and 111. In other embodiments, semiconductorregion 112 and doped region 111 (if used) can be n type with a lighterdopant concentration adjoining conductive electrode 136 to form aSchottky rectifier. In one embodiment of the Schottky rectifier, dopedregion 114 can be highly doped n type to provide an ohmic contact withconductive electrode 120. In other embodiments, doped region 114 is notused, and a Schottky diode is used as rectifier device 230. The Schottkycan be formed along bottom portion 1390 of trench 139 using a Schottkybarrier material. In some embodiments a diffused guard ring can befurther incorporated to surround at least a peripheral portion of theSchottky device. In some embodiments, insulating layer 144 along thesidewalls of trench 139 can be excluded.

FIG. 4 illustrates a partial cross-sectional view of a group III-Vsemiconductor device 201 with rectifier device 230 in a cascoderectifier structure 210 in accordance with an alternativebond-over-active embodiment. Cascode rectifier structure 210 is similarto cascode rectifier structure 110 and only the differences will bedescribed hereinafter. In this embodiment, source electrode 13 include afirst part 1310 that makes ohmic contact to 2DEG region 122 and a secondpart 1311 that is laterally spaced apart from first part 1310 that makescontact to conductive electrode 120 in trench 139 of rectifier device230. Source electrode 13 further includes a third part 1312 thatconnects first part 1310 to second part 1311. One benefit of thisconfiguration is that the separation reduces electrical interactionbetween rectifier device 230 and the ohmic contact between portion 1310of source electrode 13 and 2DEG region 122.

FIG. 5 illustrates a partial cross-sectional view of cascode rectifierstructure 210 taken along reference line 5-5 of FIG. 2. Moreparticularly, FIG. 5 illustrates a structure connecting gate pad 14 tosubstrate 100 using a similar structure to conductive electrode 120 andtrench 139. This provides for, among other things, a final die layoutthat places the cathode overlying major surface 128 and the anodeoverlying major surface 190, which simplifies the integration of thedevices. Cascode rectifier structure 110 further includes a trench 215having sidewall surface lined or covered with insulating layer 144 andfilled or partially filled with conductive material to form a conductiveelectrode 220. A p type doped region 614 is disposed adjoining a lowersurface 1395 of trench 215 and adjoining doped region 111. In oneembodiment, p type doped region 614 extends partially into doped region111. In other embodiments, p type doped region 614 can extend proximateto or all the way to major surface 190 of semiconductor substrate 28. Inone embodiment, a dielectric layer 244 separates gate electrode 14 froma second level of metallization 112, which can be used, for example, toconnect to drain electrode 12. In accordance with the presentembodiment, conductive electrode 220 is configured to electricallyconnect gate electrode 14 to substrate 100 in cascode configuration 10.In one embodiment, trench 215 and conductive electrode 220 have noactive device area below these structures.

FIG. 6 illustrates a partial top plan view of a group III-Vsemiconductor device structure 300 with a rectifier device 330 in acascode rectifier structure 310 in accordance with a further embodiment.Cascode rectifier structure 310 is similar to cascode rectifierstructure 210 with only the differences described hereinafter.Specifically, cascode rectifier structure 310 uses a source pad 130 witha rectifier device 330 formed as a separate structure. For example, aseparate structure placed away from the active area of cascode rectifierstructure 310. In the present embodiment, a first part 1300 of sourceelectrode 130 makes ohmic contact to 2DEG region 122 and a second part1301 has trench 139 disposed beneath or below it. More particularly,this configuration places trench 139 spaced apart from or laterallyspaced away from 2DEG region 122 to reduce any electrical interferencebetween rectifier device 330 and the active device of group III-Vsemiconductor device 300.

FIG. 7 illustrates a partial cross-sectional view of cascode rectifierdevice 310 of FIG. 6 taken along reference line 7-7. In the presentembodiment, source electrode 130 includes first part 1300 that iselectrically connected to a source end of 2DEG region 122 and a secondpart 1301 that is electrically connected to conductive electrode 120 intrench 139 of rectifier device 330. A third part 1302 of sourceelectrode 130 connects first part 1300 to second part 1301. In someembodiments, ion implantation techniques can be used to remove the 2DEGregion 122 in a portion 1315 below third part 1302 where channel layer119 adjoins barrier layer 121. In one embodiment, one or more nitrogenion implant steps are used. In one embodiment, multiple ion implantdoses and implant energies can be used. In some embodiments, the ionimplant doses can in a range from about 9.0×10 ¹² atoms/cm² to about2.5×10¹³ atoms/cm², and implant energies can range from about 30 keV toabout 400 keV. In other embodiments, a shallow trench structure can beused to remove part of 2DEG region 122. One advantage of the presentembodiment is that rectifier device 330 can have larger area for currentconduction and termination structures can be added around the source padto increase breakdown voltage.

FIG. 8 illustrates a partial cross-sectional view of a group III-Vsemiconductor device 400 integrated with a rectifier device 430 in acascode rectifier structure 410 in accordance with another embodiment.Cascode rectifier structure 410 is similar to cascode rectifierstructure 110 of FIG. 3, and only the differences will be describedhereinafter. In one embodiment, rectifier device 430 is provided withoutinsulating layer 144 along sidewall surfaces of trench 139 andconductive electrode 120 is connected to heterostructure 113 and aportion of substrate 100. Additionally, cascode rectifier structure 410is provided with a multi-level conductive layer configuration, whichcomprises a conductive layer 912 electrically connected to drainelectrode 12 and a conductive layer 1012 electrically connected tosecond conductive layer 912. In addition, an optional conductive layer913 can be electrically connected to source electrode 13 to providedesired routing capability. A first interlayer dielectric (ILD) 931insulates gate electrode 14 and a second ILD 932 insulates agateelectrode 14 and conductive layer 913. In one embodiment, conductivelayer 1012 extends across the active area of cascode rectifier structure410.

FIG. 9 illustrates a partial cross-sectional view of another portion ofcascode rectifier structure 410. The partial cross-sectional view ofFIG. 9 is similar to structure illustrated in FIG. 5 and only thedifferences will be described hereinafter. In the present embodiment,insulating layer 244 is not used along sidewall surfaces of trench 215so that conductive electrode 220 is in contact with heterostructure 113.In this embodiment, 2DEG channel 121 is removed in the region ofheterostructure 113 using, for example, the ion implantation processdescribed previously. In the absence of 2DEG channel 121, leakage and/orbreakdown issues are reduced. Additionally, in this embodiment dopedregion 111 comprises a p+ type region, which can eliminate the need forsemiconductor region 112 and doped region 614 so that lower surface 1395makes electrical contact with doped region 111. One advantage of thisembodiment is that it reduces the number of processing steps therebyreducing manufacturing costs.

FIG. 10 illustrates a partial cross-sectional view of group III-Vsemiconductor structure 200 integrated with rectifier device 230 in acascode rectifier structure 1101 in accordance with another embodimenttaken along reference line 3-3 of FIG. 2. Cascode rectifier structure1101 is similar to cascode rectifier structure 110 and only thedifferences will be described hereinafter. Specifically, in cascoderectifier structure 1101, doped region 111 of substrate 100 comprises ap or p+ type region and semiconductor region 112 comprises an n typeregion. In one embodiment, doped region 114 comprises an n+ type dopedregion. In the present embodiment, n type semiconductor region 112preferably terminates in the active area of cascode rectifier structure1101 and does not extend to the edge of the die. In one embodiment, ntype semiconductor region 112 can be formed by selective epitaxy or bymasked implant during epitaxial growth. In one embodiment, p type dopedregion 111 can be continuous to the edge of the die. In accordance withthe present embodiment, the breakdown voltage of rectifier device can bedetermined based on the dopant concentrations of n− type semiconductorregion 112 and the vertical distance between doped region 114 and p typedoped region 111. In this embodiment, a conductive trench electrode 220connecting gate pad 14 to substrate 100 as illustrated in FIG. 5 can beused to connect the gate to the anode of the rectifier.

FIG. 11 illustrates a partial cross-sectional view of group III-Vsemiconductor structure 200 integrated with rectifier device 230 in acascode rectifier structure 1102 in accordance with a further embodimenttaken along reference line 3-3 of FIG. 2. Cascode rectifier structure1102 is similar to cascode rectifier structure 1101 and only thedifferences will be described hereinafter. Specifically, in cascoderectifier structure 1102, a p type doped region 1110 is formed over ntype semiconductor region 112. In one embodiment, n type semiconductorregion 112 preferably terminates in the active area of cascode rectifierstructure 1102 and does not extend to the edge of the die. In oneembodiment, n type semiconductor region 112 can be formed by selectiveepitaxy or by masked implant during epitaxial growth. Similarly, incascode rectifier structure 1102 doped region 114 comprises an n+ typedoped region. In one embodiment, both p type doped regions 111 and 1110can be continuous to the edge of the die. In accordance with the presentembodiment, the breakdown voltage of rectifier device can be determinedbased on the dopant concentrations of n− type semiconductor region 112and the vertical distance between doped region 114 and p type dopedregions 111 and 1110. In this embodiment, a conductive trench electrode220 connecting gate pad 14 to substrate 100 as illustrated in FIG. 5 canbe used to connect the gate to the anode of the rectifier.

With reference back to FIG. 1, the operation of cascode rectifierstructure 10 will be described. In accordance with the presentembodiment, the cascode rectifier structures are two terminal devices,namely the cathode and the anode. Similar to basic rectifiers, cascoderectifier structure has two basic states of operation—reverse blockingand forward conduction. Under a reverse blocking state of operation, ahigh voltage is applied to the cathode with reference to the anode. Inone embodiment, as the voltage on the cathode/drain of the normally-ondevice is increased, the voltage on source or node 13 of the normally-ondevice also rises. As the voltage on source or node 13 increases, thegate-to-source voltage (i.e., difference in voltage between gate or node14 and source or node 13) gains negative potential. When the magnitudeof this voltage reaches the threshold voltage of the normally-on device,it starts to turn off and block the high reverse voltage on drain 12.The breakdown voltage of device 30 should be equal to or greater thanthe midpoint voltage between the two devices at node 13.

Under the forward conduction state of operation, the anode is at ahigher voltage relative to the cathode. In this condition, rectifierdevice 30 is forward biased, and current flows through the channel ofnormally-on device 11 to the cathode. Thus, the forward voltage dropacross rectifier 30 is the sum of the diode voltage drop of device 11and the voltage drop across device 11.

Relevant features of the present embodiments include, but are notlimited to including or integrating a rectifier device with a groupIII-V transistor to provide an integrated cascode rectifier devicehaving reduced power losses compared to silicon power semiconductordevices. In particular, since a lower breakdown voltage rectifier devicecan be used, the structure provides a high voltage power device withimproved forward conduction and reduced recovery times, compared to highvoltage silicon-based rectifier devices, which improves power conversionefficiencies. In accordance with the present embodiment, the breakdownvoltage of the rectifier device can be controlled by the doping profilesof selected doped regions. Another benefit of this configuration is thatthe trench is etched through the heterostructure into the underlyingsemiconductor region, which has been experimentally shown to reducelocalized stresses in integrated device. This allows reducing thethickness of the heterostructure and thereby improving its thermalperformance of the group III-V cascode rectifier device. A furtheradvantage is that the conductive electrode within the trench acts as aheat sinking device for the source electrode. Also, this configurationof the present embodiments helps in tuning the breakdown voltage of therectifier device by changing the thickness of the intrinsic region orchanging the dopant concentration of the semiconductor region(s).

In view of all of the above, it is evident that novel group III-Vcascode rectifier structures and methods of making the same have beendescribed. Included, among other features, are a group III-V transistordevice integrated with a semiconductor rectifier, such as a lowervoltage silicon rectifier that provides a conduction path generallyperpendicular to the conduction path of the group III-V transistordevice. The present embodiments provide, among other things,configurations to integrate a rectifier device with a group III-Vtransistor to provide an integrated cascode rectifier structure. Thisavoids a discrete solution, which requires co-packaging and itsassociated costs and parasitic issues. Further, the present embodimentsprovide built-in heat sinking capability and have reduced stress.

While the subject matter of the invention is described with specificpreferred embodiments and example embodiments, the foregoing drawingsand descriptions thereof depict only typical embodiments of the subjectmatter, and are not therefore to be considered limiting of its scope. Itis evident that many alternatives and variations will be apparent tothose skilled in the art.

As the claims hereinafter reflect, inventive aspects may lie in lessthan all features of a single foregoing disclosed embodiment. Thus, thehereinafter expressed claims are hereby expressly incorporated into thisDetailed Description of the Drawings, with each claim standing on itsown as a separate embodiment of the invention. Furthermore, while someembodiments described herein include some but not other featuresincluded in other embodiments, combinations of features of differentembodiments are meant to be within the scope of the invention and meantto form different embodiments as would be understood by those skilled inthe art.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor substrate having a first major surface and an opposingsecond major surface; a heterostructure adjacent the first majorsurface, the heterostructure comprising: a channel layer; and a barrierlayer over the channel layer; a first electrode disposed proximate to afirst portion of the channel layer; a second electrode disposedproximate to a second portion of the channel layer and spaced apart fromthe first electrode; a third electrode disposed on the second majorsurface of the semiconductor substrate; a control electrode disposedbetween the first electrode and the second electrode and configured tocontrol a first current path between the first electrode and the secondelectrode; a first trench electrode extending through theheterostructure into the semiconductor substrate, wherein the firsttrench electrode is electrically coupled to the first electrode; and arectifier device disposed in the semiconductor substrate andelectrically coupled to the first trench electrode and electricallycoupled to the third electrode, wherein the rectifier device isconfigured to provide a second current path generally perpendicular tothe first current path, and wherein the control electrode iselectrically coupled to the semiconductor substrate.
 2. Thesemiconductor device of claim 1 further comprising a second trenchelectrode electrically connected the control electrode to thesemiconductor substrate, wherein the second trench electrode comprises atrench and a conductive material in the trench.
 3. The semiconductordevice of claim 2, wherein the second trench electrode comprises adielectric layer between sidewall surfaces of the trench and theconductive material.
 4. The semiconductor device of claim 1, wherein therectifier device comprises a first doped region having a firstconductivity type and adjoining a lower surface of the trench electrode,and wherein the semiconductor substrate comprises: a semiconductorregion adjacent the first doped region and comprising a secondconductivity type opposite to the first conductivity type; and a seconddoped region having the second conductivity type and adjoining thesecond major surface, wherein the second doped region has a higherdopant concentration than the semiconductor region.
 5. The semiconductordevice of claim 4 further comprising a third doped region of the secondconductivity type disposed between the semiconductor region and theheterostructure.
 6. The semiconductor device of claim 4, wherein thefirst doped region laterally extends to overlap the first controlelectrode.
 7. The semiconductor device of claim 1, wherein: the channellayer comprises a group III-V material; the barrier layer comprises agroup III-V material; and, the first electrode overlaps the first trenchelectrode.
 8. The semiconductor device of claim 1, wherein the firstelectrode comprises a pad portion having a first part and a second part,and wherein the first part is between the first control electrode andthe second part, and wherein the second part overlaps the first trenchelectrode.
 9. The semiconductor device of claim 8, wherein the padportion comprises a second part connecting the first part to the thirdpart, and wherein a portion of the heterostructure is laterally betweenthe first part and the second part.
 10. The semiconductor device ofclaim 1, wherein the first trench electrode comprises a trench and aconductive material disposed overlying the trench.
 11. The semiconductordevice of claim 10, wherein the first trench electrode further comprisesa dielectric layer between sidewall surfaces of the trench and theconductive material.
 12. A semiconductor device comprising: asemiconductor substrate having a first major surface and an opposingsecond major surface, wherein the semiconductor substrate comprises afirst doped region having a first conductivity type adjacent the secondmajor surface; a heterostructure adjacent the first major surface,wherein the heterostructure comprises: a channel layer comprising groupIII-V material; and a barrier layer over the channel layer andcomprising a group III-V material; a first electrode disposed proximateto a first portion of the channel layer; a second electrode disposedproximate to a second portion of the channel layer and spaced apart fromthe first electrode; a control electrode disposed between the firstelectrode and the second electrode and configured to control a firstcurrent path between the first electrode and the second electrode; afirst trench electrode extending through the heterostructure into thesemiconductor substrate, wherein the first trench electrode iselectrically coupled to the first electrode; a second trench electrodeextending through the heterostructure and a portion of the semiconductorsubstrate, wherein the second electrode is electrically coupled to thefirst doped region and the control electrode; and a rectifier devicecomprising a second doped region of the a second conductivity typedisposed adjoining the first trench electrode in the semiconductorsubstrate and electrically coupled to the first trench electrode andelectrically coupled to a third electrode, wherein the rectifier deviceis configured to provide a second current path.
 13. The semiconductordevice of claim 12, wherein: the semiconductor device comprises a groupIII-V transistor structure; the first electrode comprises a sourceelectrode; the second electrode comprises a drain electrode; and thefirst electrode overlaps the first trench electrode.
 14. Thesemiconductor device of claim 13, wherein the first trench electrode isinset from at least one side surface of the first electrode.
 15. Thesemiconductor device claim 12, wherein the second doped region and thedrain electrode overlap.
 16. The semiconductor device of claim 12further comprising a third doped region of the first conductivity typedisposed between the semiconductor region and the heterostructure.
 17. Asemiconductor device comprising: a semiconductor substrate having afirst major surface and an opposing second major surface; aheterostructure adjacent the first major surface, the heterostructurecomprising: a group III-V channel layer; and a group III-V barrier layerover the group III-V channel layer; a first electrode disposed proximateto a first portion of the group III-V channel layer; a second electrodedisposed proximate to a second portion of the group III-V channel layerand spaced apart from the first electrode; a third electrode disposed onthe second major surface of the semiconductor substrate; a controlelectrode disposed between the first electrode and the second electrodeand configured to control a first current path between the firstelectrode and the second electrode; a fourth electrode electricallycoupled to the first electrode and the semiconductor substrate; and arectifier device disposed in the semiconductor substrate andelectrically coupled to the fourth electrode and electrically coupled tothe third electrode, wherein the rectifier device is configured toprovide a second current path generally perpendicular to the firstcurrent path, and wherein the control electrode is electrically coupledto the semiconductor substrate.
 18. The semiconductor device of claim17, wherein the rectifier device comprises a first doped region having afirst conductivity type and adjoining a lower surface of the firsttrench electrode, and wherein the semiconductor substrate comprises: asemiconductor region adjacent the first doped region and comprising asecond conductivity type opposite to the first conductivity type; and asecond doped region having the second conductivity type and adjoiningthe second major surface, wherein the second doped region has a higherdopant concentration than the semiconductor region.
 19. Thesemiconductor device of claim 18, wherein the fourth electrode comprisesa first trench electrode extending through the heterostructure, andwherein the control electrode is electrically coupled to the seconddoped region with a second trench electrode extending through theheterostructure into the semiconductor substrate.
 20. The semiconductordevice of claim 19 further comprising a third doped region of the secondconductivity type disposed adjoining an interface between theheterostructure and the semiconductor substrate.
 21. The semiconductordevice of claim 19, wherein the heterostructure is devoid of a channelregion proximate to the second trench electrode, and wherein the secondtrench electrode comprises a trench and a conductive electrode.
 22. Thesemiconductor device of claim 21, wherein the second trench electrodefurther comprises a dielectric material between sidewalls of the trenchand the conductive electrode.
 23. The semiconductor device of claim 17,wherein the rectifier device comprises a Schottky rectifier, wherein thethird electrode and the second major surface of the semiconductorsubstrate are configured as a Schottky contact.